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1N5820-1N5822
1N5820 - 1N5822
Features * *
3.0 ampere operation at TA = 95C with no thermal runaway. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.
DO-201AD
COLOR BAND DENOTES CATHODE
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
VRRM IF(AV) IFSM Tstg TJ
TA = 25C unless otherwise noted
Parameter
1N5820 Maximum Repetitive Reverse Voltage Average Rectified Forward Current 3/8 " lead length @ TA = 95C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 20
Value
1N5821 30 3.0 80 -65 to +125 -65 to +125 1N5822 40
Units
V A A C C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD RJA Power Dissipation Thermal Resistance, Junction to Ambient
Parameter
Value
3.6 28
Units
W C/W
Electrical Characteristics
Symbol
VF IR CT Forward Voltage Reverse Current @ rated VR Total Capacitance VR = 4.0 V, f = 1.0 MHz
TA = 25C unless otherwise noted
Parameter
1N5820 @ 3.0 A @ 9.4 A TA = 25C TA = 100C 475 850
Device
1N5821 500 900 0.5 20 190 1N5822 525 950
Units
mV mV mA mA pF
2001 Fairchild Semiconductor Corporation
1N5820-1N5822, Rev. C
1N5820-1N5822
Schottky Rectifiers
(continued)
Typical Characteristics
Average Rectified Forward Current, IF [A]
4
20 10 Forward Current, IF [A]
T J = 25C Pulse Width = 200S
1N5820 1N5822
3
SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" 9.5 mm LEAD LENGTHS
1N5821
2
1
1
0
0
20
40 60 80 100 Lead Temperature [C]
120
140
0.1 0.2
0.3
0.4 0.5 0.6 0.7 Forward Voltage, VF [V]
0.8
0.9
Figure 1. Forward Current Derating Curve
Figure 2. Forward Voltage Characteristics
Peak Forward Surge Current, IFSM [A]
80 70 60 50 40 30 20 10 1 2 5 10 20 Number of Cycles at 60Hz 50 100
8.3ms Single Half Sine-Wave JEDEC Method
100
1N5820 T J = 125C 1N5822 1N5821 T J = 75C
Reverse Current, IR [mA]
10
1
T J = 25C
0.1
0.01
5
10
15 20 25 30 R everse Voltage, VR [V]
35
40
Figure 3. Non-Repetitive Surge Current
Figure 4. Reverse Current vs Reverse Voltage
Total Capacitance, CT [pF]
1000 800 600 400 200 100 80 60 40 20 10 0.1
0.4
1 4 10 Reverse Voltage, VR [V]
40
100
Figure 5. Total Capacitance
2001 Fairchild Semiconductor Corporation
1N5820-1N5822, Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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